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WaferHome can manufacture the high quality silicon Epitaxial wafers
Specification for silicon Epitaxial wafers Wafer
| Epitaxial layer | subustrate layer | ||||||||
|---|---|---|---|---|---|---|---|---|---|
| 直径 | 衬底层材料 | 外延层材料 | 类型/掺杂 |
晶向 |
厚度 | 电阻率 | Flat |
类型/掺杂 |
电阻率 |
| 300mm | Silicon | Silicon | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation |
2 - 100um +/-6% | 0.1- 200 Ohm-cm /Customization |
N/A 16mm 22.5mm | P(Boron) N(Phos/As/Sb) | 0.0001 - 200 Ohm-cm /Customization |
| 200mm | Silicon | Silicon | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation | 2 - 100um +/-6% | 0.1- 200 Ohm-cm /Customization | 32.5mm 42.5mm 57.5mm | P(Boron) N(Phos/As/Sb) | 0.0001 - 200 Ohm-cm /Customization |
| 150mm | Silicon | Silicon | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation | 2 - 100um +/-6% | 0.1- 200 Ohm-cm /Customization |
nothch/flat | P(Boron) N(Phos/As/Sb) | 0.0001 - 200 Ohm-cm /Customization |
| 100mm | Silicon | Silicon | P(Boron) N(Phos/As/Sb) | <100> <111> or special orientation | 2 - 100um +/-6% | 0.1- 200 Ohm-cm /Customization | notch/flat | P(Boron) N(Phos/As/Sb) | 0.0001 - 200 Ohm-cm /Customization |
| 300mm | Silicon | GaN | N or P or Intrinsic | N/A 16mm 22.5mm | P(Boron) N(Phos/As/Sb) | 0.0001 - 200 Ohm-cm /Customization | |||
| 200mm | Silicon | GaN | N or P or Intrinsic | 32.5mm 42.5mm 57.5mm | P(Boron) N(Phos/As/Sb) | 0.0001 - 200 Ohm-cm /Customization | |||
| 150mm | Silicon | Gan | N or P or Intrinsic | nothch/flat | P(Boron) N(Phos/As/Sb) | 0.0001 - 200 Ohm-cm /Customization | |||
| 100mm | Silicon | GaN | N or P or Intrinsic | notch/flat | P(Boron) N(Phos/As/Sb) | 0.0001 - 200 Ohm-cm /Customization | |||
| 300mm | Sappire | GaN | N or P or Intrinsic | ||||||
| 200mm | Sappire | GaN | N or P or Intrinsic | ||||||
| 150mm | Sappire | Gan | N or P or Intrinsic | ||||||
| 100mm | Sappire | GaN | N or P or Intrinsic | ||||||